Yong-Ci Zhang - Department of Materials and Optoelectronic Science, National Sun Yat-Sen University

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论文共 25 篇作者统计合作学者相似作者

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Impact of Deposition Temperature on Electrical Properties of HZO-based FeRAM

Yu-Hsuan Yeh,Yung-Fang Tan, Yen-Che Huang,Chao Cheng Lin,Chung-Wei Wu,Yong-Ci Zhang,Ya-Huan Lee, Chang,Simon M. Sze

JOURNAL OF APPLIED PHYSICSno. 6 (2024)

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Forming-Free ZnO-Based Resistive Random Access Memory with Supercritical Fluid Hydrogenation Technique

Sheng-Yao Chou,Po-Hsun Chen, Chen, Chang, Yu-Bo Wang,Hong-Yi Tu,Yong-Ci Zhang,Chung-Wei Wu, Yu-Hsuan Yeh,Tsung-Ming Tsai, Yu-Ching Huang, Yi Huang Chen

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2024)

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Phase Transformation on HZO Ferroelectric Layer in Ferroelectric Random-Access Memory Induced by X-Ray Irradiation

Chung-Wei Wu,Po-Hsun Chen, Chang,Yung-Fang Tan,Shih-Kai Lin,Yu-Hsuan Yeh,Yong-Ci Zhang,Hsin-Ni Lin,Kai-Chun Chang,Chien-Hung Yeh,Simon Sze

SEMICONDUCTOR SCIENCE AND TECHNOLOGYno. 2 (2024)

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An Approach to Extract the Trap States Via the Dynamic $\textit{r}_{\text{on}}$ Method with Substrate Voltage Applied During the Recovery Time

Ya-Huan Lee,Po-Hsun Chen,Yong-Ci Zhang,Chung-Wei Wu,Sheng-Yao Chou,Yu-Bo Wang,Hung-Ming Kuo,Yu-Shan Lin, Yan-Ta Chen, Yu-Jie Tsai, Chang

IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）

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Degradation Mechanism Differences Between TiN- and TaN-electrode HZO-based FeRAMs Analyzed by Current Mechanism Fitting

Yu-Hsuan Yeh,Wen-Chung Chen, Chang,Yung-Fang Tan,Chung-Wei Wu,Yong-Ci Zhang,Ya-Huan Lee,Chao Cheng Lin, Hui-Chun Huang,Simon M. Sze

Semiconductor Science and Technology（2023）

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Interfacial Variation in HfO2-based Resistive Switching Devices with Titanium Electrodes under Asymmetric Bias Operation

Kuan-Ju Zhou, Chen, Chang,Shih-Kai Lin,Yu-Bo Wang,Yong-Ci Zhang,Po-Yu Yen,Kui-You Shao, Hui-Chun Huang,Jen-Wei Huang,Simon M. Sze

JOURNAL OF PHYSICS D-APPLIED PHYSICS（2023）

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Abnormal on Current Tendency in Saturation Region Between High and Light Carbon Doped Buffer Layer in P-Gan HEMT

Chien-Hung Yeh,Po-Hsun Chen, Chang,Kai-Chun Chang,Yu-Xuan Wang,Ting-Tzu Kuo,Yong-Ci Zhang,Jia-Hong Lin,Ya-Huan Lee,Hung-Ming Kuo,Wei-Ting Yen, I-Ting Tsai,Simon M. Sze

IEEE Electron Device Letters（2023）

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Effects of X-ray Accelerating Voltage on Electrical Properties and Reliability for Ferroelectric Random-Access Memory (Feram)

Hsin-Ni Lin, Chang,Wen-Chung Chen,Yung-Fang Tan,Kai-Chun Chang,Shih-Kai Lin,Yu-Hsuan Yeh,Chung-Wei Wu,Yong-Ci Zhang,Chien-Hung Yeh,Ya-Huan Lee,Jen-Wei Huang

APPLIED PHYSICS EXPRESSno. 3 (2022)

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Investigations on TaHf Alloys for Thin Film Resistor Applications

Kao-Yuan Wang, Chang,Wen-Chung Chen,Yong-Ci Zhang,Yi-Ting Tseng,Chih-Cheng Yang,Chun-Chu Lin,Pei-Yu Wu,Yung-Fang Tan,Tsung-Ming Tsai

Materials chemistry and physics（2022）

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Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

Yu-Bo Wang, Chang,Shih-Kai Lin,Pei-Yu Wu,Yong-Ci Zhang,Yung-Fang Tan,Wen-Chung Chen,Chung-Wei Wu,Sheng-Yao Chou,Kuan-Ju Zhou,Li-Chuan Sun,Xin-Ying Tsai,Simon M. Sze

IEEE Transactions on Electron Devicesno. 12 (2022): 6705-6709

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