An Approach to Extract the Trap States Via the Dynamic $\textit{r}_{\text{on}}$ Method with Substrate Voltage Applied During the Recovery Time
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Dynamic on-resistance (Dynamic R-on),hard switching stress,impact ionization,impact ionization,p-GaN high elec-tron mobility transistor (p-GaN HEMT),p-GaN high elec-tron mobility transistor (p-GaN HEMT),substrate voltage,substrate voltage
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