A 7nm Cmos Technology Platform For Mobile And High Performance Compute Application

S. Narasimha,B. Jagannathan,A. Ogino,D. Jaeger,Brian J. Greene,C. Sheraw,K. Zhao, B. S. Haran,Unoh Kwon, A. K. M. Mahalingam,B. Kannan, B. Morganfeld,J. Dechene,C. Radens, A. Tessier,A. Hassan, H. Narisetty,I. Ahsan,M. Aminpur, C. An,M. Aquilino,A. Arya,Rod Augur, N. Baliga, R. Bhelkar,G. Biery,A. Blauberg, N. Borjemscaia,A. Bryant,L. Cao, V. Chauhan, M. Chen, L. Cheng, J. Choo,C. Christiansen,Tao Chu,B. Cohen, R. Coleman,D. Conklin, S. Crown, A. da Silva,D. Dechene, G. Derderian, S. Deshpande, G. Dilliway, K. Donegan,Manfred Eller, Y. Fan,Q. Fang, A. Gassaria,R. Gauthier,S. Ghosh, G. Gifford,T. Gordon,M. Gribelyuk, G. Han, J.H. Han, K. Han, M. Hasan,J. Higman,J. Holt, L. Hu, L. Huang,C. Huang,T. Hung,Y. Jin,J. Johnson, S. Johnson,V. Joshi,M. Joshi,P. Justison, S. Kalaga,T. Kim, W. Kim,R. Krishnan,B. Krishnan,K. Anil,M. Kumar, J. Lee,R. Lee,J. Lemon,S.L. Liew, P. Lindo,M. Lingalugari, M. Lipinski, P. Liu, Jinping Liu, S. Lucarini,W. Ma,E. Maciejewski, S. Madisetti, A. Malinowski,J. Mehta, C. Meng,S. Mitra, C. Montgomery,H. Nayfeh,T. Nigam,G. Northrop,K. Onishi, C. Ordonio,M. Ozbek,Rohit Pal,Sanjay Parihar,O. Patterson,E. Ramanathan,I. Ramirez,R. Ranjan, J. Sarad,V. Sardesai, S. Saudari, C. Schiller,Biswanath Senapati, C. Serrau, N. Shah,T. Shen,H. Sheng,J. Shepard, Y. Shi,M.C. Silvestre,D. Singh, Z. Song, J. Sporre,P. Srinivasan, Z. Sun,A. Sutton,R. Sweeney,K. Tabakman, M. Tan, X. Wang,E. Woodard, G. Xu, D. Xu, T. Xuan,Y. Yan, J. Yang,K.B. Yeap, M. Yu,A. Zainuddin, J. Zeng, K. Zhang, M. Zhao, Y. Zhong,Rick Carter,Chung-hsun Lin,Stephan Grunow,C. Child, M. Lagus,Robert Fox,E. Kaste, G. Gomba,Srikanth Samavedam,P. Agnello,D. K. Sohn

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2017）

引用 55|浏览49

关键词

HD 6-T bitcell size,optical patterning techniques,SAQP,SADP,mobile applications,mobile performance compute application,BEOL metallization,logic density,CMOS technology platform

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