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论文共 41 篇作者统计合作学者相似作者

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A 7nm Cmos Technology Platform For Mobile And High Performance Compute Application
S. Narasimha,B. Jagannathan,A. Ogino,D. Jaeger,Brian J. Greene,C. Sheraw,K. Zhao, B. S. Haran,Unoh Kwon, A. K. M. Mahalingam,B. Kannan, B. Morganfeld,J. Dechene,C. Radens, A. Tessier,A. Hassan, H. Narisetty,I. Ahsan,M. Aminpur, C. An,M. Aquilino,A. Arya,Rod Augur, N. Baliga, R. Bhelkar,G. Biery,A. Blauberg, N. Borjemscaia,A. Bryant,L. Cao, V. Chauhan, M. Chen, L. Cheng, J. Choo,C. Christiansen,Tao Chu,B. Cohen, R. Coleman,D. Conklin, S. Crown, A. da Silva,D. Dechene, G. Derderian, S. Deshpande, G. Dilliway, K. Donegan,Manfred Eller, Y. Fan,Q. Fang, A. Gassaria,R. Gauthier,S. Ghosh, G. Gifford,T. Gordon,M. Gribelyuk, G. Han, J.H. Han, K. Han, M. Hasan,J. Higman,J. Holt, L. Hu, L. Huang,C. Huang,T. Hung,Y. Jin,J. Johnson, S. Johnson,V. Joshi,M. Joshi,P. Justison, S. Kalaga,T. Kim, W. Kim,R. Krishnan,B. Krishnan,K. Anil,M. Kumar, J. Lee,R. Lee,J. Lemon,S.L. Liew, P. Lindo,M. Lingalugari, M. Lipinski, P. Liu, Jinping Liu, S. Lucarini,W. Ma,E. Maciejewski, S. Madisetti, A. Malinowski,J. Mehta, C. Meng,S. Mitra, C. Montgomery,H. Nayfeh,T. Nigam,G. Northrop,K. Onishi, C. Ordonio,M. Ozbek,Rohit Pal,Sanjay Parihar,O. Patterson,E. Ramanathan,I. Ramirez,R. Ranjan, J. Sarad,V. Sardesai, S. Saudari, C. Schiller,Biswanath Senapati, C. Serrau, N. Shah,T. Shen,H. Sheng,J. Shepard, Y. Shi,M.C. Silvestre,D. Singh, Z. Song, J. Sporre,P. Srinivasan, Z. Sun,A. Sutton,R. Sweeney,K. Tabakman, M. Tan, X. Wang,E. Woodard, G. Xu, D. Xu, T. Xuan,Y. Yan, J. Yang,K.B. Yeap, M. Yu,A. Zainuddin, J. Zeng, K. Zhang, M. Zhao, Y. Zhong,Rick Carter,Chung-hsun Lin,Stephan Grunow,C. Child, M. Lagus,Robert Fox,E. Kaste, G. Gomba,Srikanth Samavedam,P. Agnello,D. K. Sohn
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2017）
引用55浏览0EIWOS引用
55
0
High Performance 14nm SOI FinFET CMOS Technology with 0.0174µm2 Embedded DRAM and 15 Levels of Cu Metallization
C-H. Lin,B. Greene,S. Narasimha,J. Cai,A. Bryant,C. Radens,V. Narayanan,B. Linder, H. Ho, A. Aiyar,E. Alptekin, J-J. An,M. Aquilino,R. Bao,V. Basker,N. Breil,M. Brodsky, W. Chang,L. Clevenger,D. Chidambarrao, C. Christiansen, D. Conklin,C. DeWan, H. Dong,L. Economikos, B. Engel, S. Fang, D. Ferrer, A. Friedman,A. Gabor,F. Guarin, X. Guan, M. Hasanuzzaman, J. Hong, D. Hoyos,B. Jagannathan, S. Jain, S-J. Jeng, J. Johnson, B. Kannan, Y. Ke,B. Khan, B. Kim,S. Koswatta,A. Kumar, T. Kwon,U. Kwon,L. Lanzerotti, H-K Lee, W-H. Lee, A. Levesque, W. Li, Z. Li, W. Liu, S. Mahajan,K. McStay,H. Nayfeh, W. Nicoll,G. Northrop, A. Ogino,C. Pei, S. Polvino, R. Ramachandran,Z. Ren,R. Robison,I. Saraf,V. Sardesai, S. Saudari,D. Schepis,C. Sheraw,S. Siddiqui,L. Song, K. Stein, C. Tran,H. Utomo,R. Vega, G. Wang, H. Wang, W. Wang, X. Wang, D. Wehelle-Gamage,E. Woodard, Y. Xu, Y. Yang, N. Zhan, K. Zhao, C. Zhu, K. Boyd,E. Engbrecht,K. Henson,E. Kaste,S. Krishnan, E. Macieje Ski,H. Shang,N. Zamdmer,R. Divakaruni, J. Rice,S. Stiffler,P. Agnello
2014 IEEE International Electron Devices Meeting（2014）
引用169浏览0EIWOS引用
169
0
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作者统计

#Papers: 41

#Citation: 3328

H-Index: 24

G-Index: 40

Sociability: 6

Diversity: 2

Activity: 0

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