High reliability 32 nm Cu/ULK BEOL based on PVD CuMn seed, and its extendibility

Takeshi Nogami,T Bolom,A Simon,By Kim,Ck Hu,K Tsumura, Anup Madan,F H Baumann, Yang Wang,P Flaitz, C R Parks,Patrick W Dehaven,R Davis, M M Zaitz,B St Lawrence,Robin R Murphy, Lin Tai,S Molis, Sh Rhee,T Usui, Celia Cabral,J A Maniscalco,L A Clevenger,B Li,Cathryn Christiansen,F Chen,Taeho Lee, J Schmatz,H Shobha,F Ito,Todd M Ryan,S Nguyen,D Canaperi, Jens Arnold,Sunghyun Choi,Stephan A Cohen,E Liniger,Hc Chen,St Chen, Tram Vo,J Kelly,Oscar Van Der Straten,C Penny,Griselda Bonilla,P Kozlowski,T Spooner,Daniel C Edelstein

Electron Devices Meeting（2010）

Cited 28|Views21

Key words

aluminium alloys,copper alloys,electromigration,integrated circuit interconnections,integrated circuit reliability,low-k dielectric thin films,manganese alloys,tantalum compounds,vapour deposited coatings,beol,cual,cumn,pvd process,tan,back end of line technology,electromigration reliability,liner materials,seed layer,size 32 nm,ultra low-k,copper,resistance,materials,reliability,manganese

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