A Multi-WL Approach to Suppress Gate-Induced Drain Leakage, Floating Body Effect, and Row Hammer Effect in Array Transistor of 4F2 DRAM and 3D Stackable DRAM
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
关键词
Gate-induced Drain Leakage,Rowhammer,Row Hammer Effect,Work Function,Storage Nodes,Main Gate,TCAD Simulation,Quantum Effects,Band Bending,Vertical Channel,Transistor Channel,Doping Profile
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