Reliable Memory Operation with Low Read Disturb Rate in the World Smallest 1Selector-1Mtj Cell for 64 Gb Cross-Point MRAM

Hisanori Aikawa, Jeonghwan Song,Toshihiko Nagase, Soo Man Seo, Yuichi Ito,Tae Jung Ha, Kenichi Yoshino, Bo Kyung Jung, Tadaaki Oikawa,Ku Youl Jung, Su Jin Chae, Bum Su Kim, Min Chul Shin, Dong Keun Kim, Tae Ho Kim,Kosuke Hatsuda,Katsuhiko Hoya,Soo Gil Kim, Jae Yun Yi,Seon Yong Cha

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Read Disturbance,Error Rate,Magnetic Field,Cell Size,Data Retention,Capacitive Component,Test Chip,Ion Beam Etching

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