Analysis of the Formation of the Off-State Leakage Current in P-Gan HEMT
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
Key words
Leakage currents,HEMTs,Stress,Logic gates,Electrons,Buffer layers,Degradation,Testing,Market research,Wide band gap semiconductors,Gate injection,OFF-state leakage current (Ioff),p-GaN high electron mobility transistor (HEMT),punchthrough current,trap-assisted thermionic field emission (TA-TFE)
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