A Systematic Study of Charge-Trapping Phenomenon in FeFET on FDSOI Via Low-Frequency Noise Spectroscopy

Qingxiao Zhu, Lihua Xu,Yuan Wang,Yue Zhao,Lingfei Wang,Qing Luo

IEEE ELECTRON DEVICE LETTERS（2025）

引用 0|浏览7

关键词

FeFETs,Logic gates,Silicon-on-insulator,Iron,Hysteresis,Fabrication,Voltage measurement,Spectroscopy,Nonvolatile memory,Noise measurement,Charge trapping,defect,FDSOI,ferroelectric (Fe),HZO,LFN,memory window (MW)

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