Investigating the Arc-Shaped Kink Drain Voltage of Drain Current with Capacitance-Voltage Measurement Method in GaN HEMTs

Jui-Tse Hsu,Shawn S. H. Hsu, Chang,Chen-Hsin Lien,Ting-Tzu Kuo,Chien-Hung Yeh,Jia-Hong Lin,Ya-Huan Lee, Cheng-Hsien Lin,Wei-Chieh Hung,I-Yu Huang

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY（2024）

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关键词

Stress,MODFETs,HEMTs,Logic gates,Degradation,Electrons,Electron traps,Capacitance-voltage characteristics,Gallium nitride,Voltage measurement,Gallium nitride (GaN),depletion mode,high electron mobility transistor (HEMT),kink effect,hot carrier stress

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