First Demonstration of Top-Gate Enhancement-Mode ALD In2O3 FETs with High Thermal Budget of 600 °C for DRAM Applications

Jian-Yu Lin,Zhuocheng Zhang,Zehao Lin,Chang Niu,Yizhi Zhang, Yifan Zhang, Taehyun Kim, H. Jang, C. Sung, M. Hong, S. M. Lee, T. Lee, M. H. Cho, D. Ha,Changwook Jeong,Haiyan Wang,M. A. Alam,Peide D. Ye

IEEE ELECTRON DEVICE LETTERS（2024）

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Key words

Field effect transistors,Annealing,Random access memory,Nickel,Simulated annealing,Logic gates,Fabrication,Atomic layer deposition (ALD),indium oxide,enhancement-mode,high thermal budget,DRAM

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