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Research Interests

Papers共 37 篇Author StatisticsCo-AuthorSimilar Experts

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First Demonstration of Top-Gate Enhancement-Mode ALD In2O3 FETs with High Thermal Budget of 600 °C for DRAM Applications
Jian-Yu Lin,Zhuocheng Zhang,Zehao Lin,Chang Niu,Yizhi Zhang, Yifan Zhang, Taehyun Kim, H. Jang, C. Sung, M. Hong, S. M. Lee, T. Lee, M. H. Cho, D. Ha,Changwook Jeong,Haiyan Wang,M. A. Alam,Peide D. Ye
IEEE ELECTRON DEVICE LETTERSno. 10 (2024): 1851-1854
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Author Statistics

#Papers: 37

#Citation: 227

H-Index: 7

G-Index: 14

Sociability: 5

Diversity: 1

Activity: 35

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