Temperature Dependent Trap Characterisation and Modelling of Silicon Carbide MOS Capacitor

Jinglin Li,Sten Vollebregt,Yaqian Zhang,Aditya Shekhar,Alexander May,Willem D. Van Driel,Guoqi Zhang

2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)（2024）

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关键词

Silicon Carbide,High Temperature,High Temperature Conditions,External Temperature,Charge Trapping,Transient Current,Elevated Temperature,Time Constant,Function Of Temperature,Charge Carriers,Conduction Band,Surface Potential,Signal Frequency,Charge Transport,Decrease In Capacity,Electronic Absorption,Doping Concentration,Sinusoidal Signal,Trap States,Conduction Band Edge,Occupancy Probability,Density Of Trap States,Trap Density,Gate Bias,Interface Trap,Capture Cross Section,Increase In Temperature,Density Dependence,Depletion Region,Gate Oxide

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