The Transition of Threshold Voltage Shift of Al2O3 /sin4 AlGaN/GaN MIS-HEMTs under Negative Gate Bias Stress from DC to AC
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
Key words
Logic gates,Degradation,Stress,Temperature measurement,Silicon,Wide band gap semiconductors,Threshold voltage,AC stress,metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs),negative gate bias stress (NGBS)
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