Analysis of Abnormal C–V Hump on Si3N4 MIS-HEMT with Mesa Isolation under Negative Gate Bias Stress

Ya-Huan Lee,Kai-Chun Chang,Hsin-Ni Lin,Mao-Chou Tai,Wei-Chen Huang,Jia-Hong Lin,Hung-Ming Kuo,Jason Lee,I-Yu Huang, Chang

IEEE Transactions on Electron Devices（2024）

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关键词

C-V hump,mesa isolation,metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs),negative gate bias stress (NGBS),subchannel effect

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