A 9mb HZO-Based Embedded FeRAM with 10-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier.
IEEE JOURNAL OF SOLID-STATE CIRCUITS（2024）
Key words
Ferroelectric capacitor (FeCAP),ferroelectric random access memory (FeRAM),embedded nonvolatile memory (eNVM),refresh,sense amplifier (SA),write driver
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