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Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

C. Virgilio,L. Broussous,P. Garnier,J. Carlier,P. Campistron,V. Thomy,M. Toubal,P. Besson,L. Gabette,B. Nongaillard

ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES XIII（2016）

Cited 6|Views3
Key words
Deep Trench Isolation,Through Silicon Via,wetting kinetics,high aspect ratio,acoustic reflectometry
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