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High-Index-Contrast Λ = 1.55 Μm AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE(2019)

Cited 1|Views70
Key words
AlInGaAs,InP dissociation,lateral oxidation,ridge waveguide,telecommunication lasers
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