Ti and NiPt/Ti Liner Silicide Contacts for Advanced Technologies

P. Adusumilli,E. Alptekin,M. Raymond,N. Breil,F. Chafik,C. Lavoie, D. Ferrer,S. Jain,V. Kamineni,A. Ozcan, S. Allen, J. J. An,V. Basker,R. Bolam,H. Bu, J. Cai,J. Demarest,B. Doris,E. Engbrecht,S. Fan,J. Fronheiser,O. Gluschenkov,D. Guo,B. Haran, D. Hilscher,H. Jagannathan,D. Kang,Y. Ke,J. Kim,S. Koswatta, A. Kumar,A. Labonte, R. Lallement, W. Lee, Y. Lee,J. Li,C-H Lin,B. Liu,Z. Liu,N. Loubet, N. Makela,S. Mochizuki,B. Morgenfeld,S. Narasimha, T. Nesheiwat,H. Niimi,C. Niu,M. Oh,C. Park,R. Ramachandran,J. Rice,V. Sardesai,J. Shearer,C. Sheraw,C. Tran,G. Tsutsui,H. Utomo,K. Wong,R. Xie,T. Yamashita,Y. Yan,C. Yeh, M. Yu,N. Zamdmer, N. Zhan, B. Zhang,V. Paruchuri, C. Goldberg,W. Kleemeier, S. Stiffler,R. Divakaruni,W. Henson

2016 IEEE Symposium on VLSI Technology（2016）

Cited 24|Views61

Key words

liner silicide contacts,source-drain contacts,3D FinFET devices,n-FET,p-FET,metallization process,dopant concentrations,epitaxy,size 14 nm,NiPt-Ti,SiGe

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