Demonstration of Record Sige Transconductance and Short-Channel Current Drive in High-Ge-Content Sige Pmos Finfets with Improved Junction and Scaled Eot

Pouya Hashemi,Kam-Leung Lee,Takashi Ando,Karthik Balakrishnan,John A. Ott, Syuranga Koswatta,Sebastian U. Engelmann,Dae-Gyu Park,Vijay Narayanan,Renee T. Mo,Effendi Leobandung

2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2016）

引用 14|浏览71

关键词

hot ion-implant,interface layer,spacer thickness,series resistance,junction resistance,high-performance SiGe pMOS FinFET,scaled EOT,improved junction,short-channel current drive,record SiGe transconductance,high-Ge-content SiGe PMOS FinFET,voltage 0.5 V,voltage 1.0 V,SiGe

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