Migrating from Planar to FinFET for Further CMOS Scaling: SOI or Bulk?

T. Chiarella,L. Witters,A. Mercha,C. Kerner,R. Dittrich,M. Rakowski,C. Ortolland,L-A. Ragnarsson,B. Parvais,A. De Keersgieter,S. Kubicek,A. Redolfi,R. Rooyackers,C. Vrancken,S. Brus,A. Lauwers,P. Absil,S. Biesemans,T. Hoffmann

ESSCIRC（2009）

引用 33|浏览1

关键词

CMOS integrated circuits,MOSFET circuits,semiconductor device manufacture,CMOS scaling,SOI substrates,SRAM cells,high-performing FinFET ring-oscillators,intrinsic device performance,junction capacitance,low doped fins,multi-gate architecture,voltage 1 V,voltage gain

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