Thermal Cycle Reliability of Stacked Via Structures with Copper Metallization and an Organic Low-K Dielectric

RG Filippi, JF McGrath,TM Shaw,CE Murray,HS Rathore,PS McLaughlin,V McGahay, L Nicholson,PC Wang,JR Lloyd,M Lane,R Rosenberg, X Liu,YY Wang,W Landers,T Spooner,JJ Demarest, BH Engel,J Gill, G Goth,E Barth,G Biery, CR Davis,RA Wachnik,R Goldblatt,T Ivers, A Swinton, C Barile,J Aitken

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS（2004）

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关键词

copper,failure analysis,fatigue cracks,semiconductor device metallisation,semiconductor device reliability,statistical analysis,Cu,Cu Dual Damascene metallization,Cu metallization,bimodal lognormal failure distribution,failure analysis,organic low-k dielectric,reliability,stacked via structures,thermal cycle reliability,thermal cycle statistical behavior

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