A 6 V Embedded 90 Nm Silicon Nanocrystal Nonvolatile Memory

R Muralidhar,RF Steimle,M Sadd,R Rao,CT Swift,EJ Prinz,J Yater, L Grieve,K Harber,B Hradsky,S Straub,B Acred,W Paulson,W Chen, L Parker, SH Anderson,M Rossow,T Merchant, M Paransky,T Huynh, D Hadad,KM Chang,BE White

IEEE International Electron Devices Meeting 2003

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关键词

PLD programming,elemental semiconductors,flash memories,integrated circuit measurement,integrated memory circuits,microprogramming,nanoelectronics,nanostructured materials,random-access storage,silicon,0.25 micron,4 Mbit,6 V,90 nm,Si,embedded flash memories,embedded silicon nanocrystal nonvolatile memory,erase techniques,floating gate memories,process technologies,programming techniques,silicon nanocrystal based nonvolatile memory arrays

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