General Review of Issues and Perspectives for Advanced Copper Interconnections Using Air Gap As Ultra-Low K Material
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat No03TH8695)
关键词
ULSI,air gaps,chemical vapour deposition,copper,dielectric materials,integrated circuit interconnections,permittivity,silicon compounds,BEOL,Cu-SiO2,Cu-SiOC,air cavities,air gap,copper interconnections,electrical performances,integration processes,microelectronics community,nonconformal CVD deposition,ultra-low K material
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