3-D Mirror-Bit SONOS Memory Device with a Vertical-Channel Select Gate Transistor
2025 Conference of Science and Technology of Integrated Circuits (CSTIC)（2025）
关键词
Gate Electrode,Select Gate,Fabrication Process,Electrical Performance,Hot Electrons,Positive Voltage,Non-volatile Memory,Dry Etching,polySia,Read Operation,Vertical Channel,Deep Trench
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