Time-dependence Dielectric Breakdown of Novel Dopant-Segregated Tunneling Field Effect Transistors Based on Foundry Platform
2025 Conference of Science and Technology of Integrated Circuits (CSTIC)（2025）
关键词
Field-effect Transistors,Tunnel Field-effect Transistors,Open Voltage,Maximum Voltage,Weibull Distribution,Current Ratio,Hot Electrons,Voltage Stress,Device Lifetime,Source Side
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