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Z2-FET Memory with Both Flash and DRAM Modes

Baitong Tian, Yingxin Chen, Xiao-Lan Tang,Jing Wan

2025 Conference of Science and Technology of Integrated Circuits (CSTIC)(2025)

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Key words
Feedback Mechanism,Random Access Memory,Memory Devices,Gate Dielectric,Sources In Order,Flash Memory,Gate Capacitance,Speed Of Access,TCAD Simulation,Data Readout,Chromatography,Photolithography,Types Of Pain,Output Current,Operation Principle,Reading Process,Electron Beam Evaporation,Atomic Layer Deposition,Moderate Time,Logic State,Data Retention,Electron Barrier,Drain Current,Retention Capability
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