Enhanced Memory Window and Reliability of Α-Igzo FeFET Enabled by Atomic-Layer-deposited HfO2 Interfacial Layer

Yinchi Liu, Xun Lu, Shiyu Li,Hao Zhang, Jining Yang, Yeye Guo, Dmitriy Anatolyevich Golosov,Chenjie Gu,Hongliang Lu,Zhigang Ji,Shijin Ding,Wenjun Liu

Science China Information Sciences（2025）

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Key words

HfO2,interfacial layer,Hf0.5Zr0.5O2,memory window,reliability

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