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    • Low-Frequency Noise Investigation of Organic Field-Effect Transistors Based on N-Type Donor-Acceptor Conjugated Copolymer

    Lijian Chen, Quanhua Chen, Hong Zhu, Walid Boukhili,Binhong Li,Xing Zhao,Chee Leong Tan,Huabin Sun,Stefan Mannsfeld,Yong Xu,Dongyoon Khim

    IEEE Transactions on Electron Devices（2025）

    Cited 0|Views5
    Abstract
    Organic field-effect transistors (OFETs) based on n-type donor-acceptor (D-A) conjugated copolymer are at the forefront of research in organic electronics. Yet, an understanding of the fundamental aspects of their charge transport, in particular the relevant traps, remains limited. In this study, we show that the low-frequency noise (LFN) of n-type OFETs based on N2200 exhibits 1/f behavior. The normalized power spectrum density of the drain current (ID), namely (SId/ID2), varies similarly as (gm/ID)2 with gm being the transconductance, indicating the carrier number fluctuations. Examination on the annealing temperature and air stability of the devices with different contacts using LFN reveal sizably varied trap density, conforming the correlation between performance degradation and defect states. Thus, LFN provides quantitative insight into the charge transport behind.
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    Key words
    Charge transport,low-frequency noise (LFN),organic transistors
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