Efficient Large Scale Neural Network Acceleration with 3-D FeNOR-Based Computing-in-Memory Design

Yang Feng,Dong Zhang,Chen Sun,Zijie Zheng, Yue Chen, Qiwen Kong,Gan Liu,Xiaolin Wang,Yuye Kang,Kaizhen Han,Zuopu Zhou,Leming Jiao, Jixuan Wu,Jiezhi Chen,Xiao Gong

IEEE Transactions on Electron Devices（2025）

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关键词

3-D structure,computing-in-memory (CIM),ferroelectric field-effect transistors (FeFETs),Hf x Zr 1-x O 2 (HZO),metal–ferroelectric–metal–insulator5 semiconductor (MFMIS),oxide semiconductor

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