Analysis of the Voltage Ramp Rate Effects on the Programming Characteristics of Bipolar-Type Memristive Devices

E. Miranda, E. Piros, F.L. Aguirre, T. Kim, P. Schreyer, J. Gehrunger, T. Schwarz, T. Oster, K. Hofmann,J. Suñé, C. Hochberger, L. Alff

IEEE Transactions on Nanotechnology（2025）

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Key words

Memristor,resistive switching,energy consumption,power dissipation,SPICE,LTspice

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