Design of a Gate-All-around Arch-Shaped Tunnel-Field-effect-transistor-based Capacitorless DRAM.

Seung Ji Bae, Sang Ho Lee,Jin Park, Min Seok Kim,Jeong Woo Hong, Won Suk Koh, Gang San Yun,Jaewon Jang, Jin-Hyuk Bae,In Man Kang

Discover Nano（2025）

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关键词

Band-to-band,Tunneling,Capacitorless dynamic random-access memory,Gate-all-around,Heterostructure,SiGe,Tunnel field-effect transistor

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