Development of Fully ZnO-Based 16 × 16 1S1R RRAM Crossbar Array and Performance Investigations
IEEE Transactions on Electron Devices（2025）
关键词
Co-sputtering,crossbar,LZO,one-selector and one-resistor (1S1R),oxide layers,photomask,resistive random access memory (RRAM),SiC,zinc oxide (ZnO)
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要