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Single-Event Effects of AlGaN/GaN HEMTs under Different Biases

Ling Lv, Changjuan Guo, Muhan Xing,Xuefeng Zheng,Yanrong Cao,Peipei Hu,Jie Liu,Xiaohua Ma,Yue Hao

IEEE Transactions on Electron Devices（2025）

Cited 0|Views2
Key words
Gallium nitride (GaN),heavy ion irradiation,high-electron-mobility transistors (HEMTs),single-event effect (SEE)
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