Effect of DC Stress on Low-Frequency Noise Characteristics of W-Doped In2O3 BEOL Transistors
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
Key words
Stress,FeFETs,MOSFET,Logic gates,Noise,Semiconductor device measurement,Stress measurement,Fluctuations,Temperature measurement,Performance evaluation,Back-end-of-line (BEOL),defects,FeFET,low-frequency noise (LFN)
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