MRAM Design-Technology-System Co-Optimization for Artificial Intelligence Edge Devices

Win-San Khwa,Yi-Lun Lu,Sai Qian Zhang,Xiaoyu Sun,Syed Shakib Sarwar,Ziyun Li, Wu-Wun Chen,Jui-Jen Wu,Xiaochen Peng,Kerem Akarvardar, Ming-Yuan Song,Hung-Li Chiang,Xinyu Bao,Yu-Jen Wang,Wen-Ting Chu,Harry Chuang,Yu-Der Chih,Tsung-Yung Jonathan Chang,Barbara De Salvo,Chiao Liu,Meng-Fan Chang

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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Edge Devices,Artificial Devices,Artificial Edges,Design Space,Error Tolerance,Reading Performance,Capacitive Coupling,Promise For Use,High Endurance,Compact Area,Sense Amplifier,Neural Network,Bit Error Rate,Current Sensor,Memory Devices,Read Operation,Current Amplifier,Spin Transfer Torque,Read Voltage,Memory Technologies

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