Achieving 1ppm Write-Error Rate in SOT-MRAM with Synthetic Antiferromagnetic Free Layer

V.D. Nguyen,G. Talmelli, M. Gama Monteiro, A. Palomino,V. Kateel,D. Giuliano,S. Van Beek, N. Vander Meeren, N. Franchina Vergel,K. Wostyn,S. Couet

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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Key words

Antiferromagnetic,Free Layer,Antiferromagnetic Layer,Synthetic Antiferromagnets,Write Error Rate,Material Parameters,Tunnel Junction,Micromagnetic Simulations,Spin-orbit Torque,Magnetic Field,Pulse Width,Hysteresis Loop,Domain Wall,In-plane Field,Magnetic Configuration,Magnetization Switching,Spin Transfer Torque,Perpendicular Magnetic Anisotropy

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