Demonstration of 128 Kb SOT-MRAM Chip with 5 Ns Write and 15 Ns Read Speed, High Endurance over 1010 and Low ECC-on Bit Error Rate
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
Key words
Error Rate,Bit Error Rate,Bit Error,Intermediate State,Data Retention,Current Switching,Tunnel Junction,Spin-orbit Torque,Magnetic Field,Pulse Width,Magnetic Layer,Spin Transfer Torque,Free Layer,Turnitin,Ion Beam Etching,Film Stack
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