VT Window Model of the Single-Chalcogenide Xpoint Memory (SXM)

P. Fantini, A. Ghetti,E. Varesi,A. Pirovano, D. Baratella, C. Ribaldone,D. Campi,M. Bernasconi, R. Bez

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

High Field,Physical Mechanisms,High Electric Field,TCAD Simulation,Band Gap,Density Functional Theory,Valence Band,Local State,Excess Electrons,Negative Differential Resistance,Pulse Program,Anode Side,Properties Of Glasses,Schottky Barrier Height,Memory Window,Effective Bandgap,Segregation Model

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