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Hf0.5Zr0.5O2/HfO2/Hf0.5Zr0.5O2 Laminated Thin Films and CF4 Plasma Passivation for Improved Memory and Synaptic Characteristics of Ferroelectric Field-Effect Transistors.

Kyungsoo Park,Chulwon Chung, Boncheol Ku, Seunghyeon Yun, Junhyeok Park,Changhwan Choi

Nanoscale(2025)

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