Proposal and Realization of Light-Emitting HEMT with InGaN Quantum Well Inserted
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
HEMTs,Logic gates,Light emitting diodes,Epitaxial growth,Switches,Delays,Wide band gap semiconductors,Visible light communication,Electrons,Aluminum gallium nitride,GaN,light-emitting HEMT (LE-HEMT),monolithic integration,quantum well
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