Back-End-of-Line Compatible 2T1C Memory Cell with InGaZnO Thin-Film Transistors and Hf0.5Zr0.5O2-Based Ferroelectric Capacitors
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
关键词
Transistors,Switches,Thin film transistors,Microprocessors,Three-dimensional printing,Nonvolatile memory,Ferroelectric films,Capacitors,Zirconium,Sun,Back-end-of-line (BEOL)-compatible,ferroelectric memory,Hf0.5Zr0.5O2 (HZO),indium gallium zinc oxide (IGZO) transistor
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