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Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors

Donguk Kim, Dayeon Lee,Wonjung Kim, Ho Jung Lee,Changwook Kim,Kwang-Hee Lee, Moonil Jung, Jee-Eun Yang, Younjin Jang,Sungjun Kim,Sangwook Kim,Dae Hwan Kim

ACS APPLIED MATERIALS & INTERFACES(2025)

引用 0|浏览4
关键词
oxide semiconductors,amorphousInGaZnO,field-effecttransistors,fast-transient drain currents,cationcomposition ratio,channel length
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