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Formation of Ge quantum dots on GaN nanowires by molecular beam epitaxy

I. V. Ilkiv,K. P. Kotlyar,D. A. Kirilenko,V. A. Sharov,R. R. Reznik,G. E. Cirlin

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS（2023）

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Key words
nanowire, molecular beam epitaxy, germanium, semiconductors
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