Synthesis of Janus MoSSe on Ti-Au and Its Application for One-Step Lithography Fabrication of Electrochemical Micro-Reactors

Qixin Deng, Guoyang Chen,Zhuojun Duan,Song Liu,Da Zhan,Jiaxu Yan,Pengtao Jing,Yang Bao,Jilian Xu,Hai Xu,Binghui Li,Jilei Liu,Ligong Zhang,Kewei Liu,Lei Liu,Dezhen Shen

Applied Surface Science（2025）SCI 1区SCI 2区

Chinese Acad Sci

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Abstract

The prevalent method for synthesizing Janus transition metal dichalcogenides (Janus TMD) generally involves replacing the top layer chalcogen atoms in a monolayer TMD precursor with a different chalcogen atoms. Numerous studies have investigated various techniques for Janus TMD synthesis, but there is a notable gap in literature regarding their formation on conductive substrates. Our research bridges this gap by demonstrating the successful fabrication of Janus MoSSe on Ti-Au substrates using a room-temperature plasma-assisted substitution (RT-PAS) method. In contrast to the conditions of converting MoS2 to Janus MoSSe on sapphire and SiO2/Si substrates, the conversion process on Ti-Au substrates requires significantly higher hydrogen plasma energy or longer irradiation time. The discrepancies in the interaction between MoS2 and hydrogen plasma across diverse substrates were elucidated by using Raman spectroscopy, the first-principles calculations and X-ray photoelectron spectroscopy analysis. Subsequently, we employed a one-step lithography process to construct electrochemical micro-reactors on the Ti-Au substrates, and it is revealed that Janus MoSSe outperforms pristine MoS2 in hydrogen evolution reaction (HER) performance. This study sheds light on the intricate interactions between TMD materials and plasma within varied electronic environment, and paves a way for the rapid fabrication of devices tailored for microelectrochemical measurements of low-dimensional materials.

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Key words

Transition metal dichalcogenides,Janus MoSSe,Plasma treatment,Substrate effect,Hydrogen evolution reaction

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