Epitaxial Si/SiGe Multi-Stacks: from Stacked Nano-Sheet to Fork-Sheet and CFET Devices

R. Loo, A. Akula, Y. Shimura,C. Porret,E. Rosseel, T. Dursap,A. Y. Hikavyy, M. Beggiato,J. Bogdanowicz, A. Merkulov,M. Ayyad, H. Han,O. Richard, A. Impagnatiello, D. Wang,K. Yamamoto, T. Sipocz, A. Kerekes,H. Mertens, N. Horiguchi,R. Langer

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY（2025）

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Key words

microelectronics - semiconductor materials,complementary FET,chemical vapor deposition,Si/SiGe multi-stacks,physical properties of electronic materials

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