Investigation of X-Ray Irradiance Hardness and High Temperature Operation of H-Terminated Diamond MOSFET
IEEE TRANSACTIONS ON ELECTRON DEVICES（2025）
Key words
Diamond,Electrons,Logic gates,Electron traps,Doping,Two dimensional hole gas,MOSFET,Radiation effects,Semiconductor process modeling,Photonic band gap,2-D hole gas,diamond MOSFET,radiation hardness,TCAD simulation,total ionization dose (TID)
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