Planar InGaAs Avalanche Photodiode with Multi-Stage InAlAs/InAlGaAs Multiplication Structure
IEEE JOURNAL OF QUANTUM ELECTRONICS（2025）
Key words
Avalanche photodiodes,Noise,Temperature measurement,Dark current,Impact ionization,Doping,Indium gallium arsenide,Temperature distribution,Zinc,Semiconductor device measurement,Avalanche photodiode (APD),linear gain,DSMT,excess noise,dark current,gain-bandwidth product
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