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Improved P-Gan/algan/gan HEMTs with Magnetron Sputtered AlN Cap Layer

Mao Jia,Bin Hou, Ling Yang, Zhiqiang Xue, Qian Xiao,Meng Zhang,Hao Lu,Mei Wu, Xitong Hong,Jiale Du,Qingyuan Chang,Xiao Wang,Yang Li,Jinping Ao,Xiaohua Ma,Yue Hao

APPLIED SURFACE SCIENCE（2025）

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Key words
Magnetron-sputtered AlN,GaN HEMT,Normally-off,Time-dependent gate breakdown (TDDB)
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