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Improved Subthreshold Characteristics of Epi-Silicon FinFET Via Fin Surface Passivation Technologies

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY(2024)

Cited 1|Views6
Key words
epitaxial Si FinFET,conventional thermal oxidation (CTO),low-temperature oxidation (LTO),linear edge roughness (LER),interfacial states density (Dit)
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